APA (7th ed.) Citation

Diehle, P., Altmann, F., Hübner, S., Bruckmeier, J., Neumann, R., Stabentheiner, M., & Ostermaier, C. A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives. Elsevier.

Chicago Style (17th ed.) Citation

Diehle, Patrick, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, and Clemens Ostermaier. A New Preparation Approach for High-resolution TEM Analysis of Electrically Active Defects in P-GaN HEMT Devices from Two Orthogonal Perspectives. Elsevier.

MLA (9th ed.) Citation

Diehle, Patrick, et al. A New Preparation Approach for High-resolution TEM Analysis of Electrically Active Defects in P-GaN HEMT Devices from Two Orthogonal Perspectives. Elsevier.