Effect of Inductively Coupled Plasma Etching Parameters on n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N Ohmic Contact

Effect of Inductively Coupled Plasma Etching Parameters on n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N Ohmic Contact

High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching. In this paper, the effects of ICP etching parameters on n-Al<sub>0.5</sub>Ga<sub&...

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Bibliographic Details
Main Authors: Shanshan Yang, Meixin Feng, Yuzhen Liu, Wenjun Xiong, Biao Deng, Yingnan Huang, Chuanjie Li, Qiming Xu, Yanwei Shen, Qian Sun, Hui Yang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
N-AlGaN
ohmic contact
ICP etching
XPS
Online Access:https://ieeexplore.ieee.org/document/10547402/
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