Energy efficiency analysis of spin–orbit torque MRAM using composition dependent resistivity and spin Hall angle in Pt/W multilayer structure
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology. As energy consumption in data computation has become a major challenge i...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0250349 |
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