Emerging horizons in phase-change materials for non-volatile memory

Emerging horizons in phase-change materials for non-volatile memory

Phase Change Memory (PCM) technology, particularly utilizing GeTe-based materials, has emerged as a compelling alternative to traditional nonvolatile memory systems, offering significant advancements in speed, scalability, and endurance. This review provides an in-depth analysis of recent developmen...

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Bibliographic Details
Main Authors: Yan Chen, Yuqiao Le, Lei Chen, Haisong Liu, Tangyou Sun, Xingpeng Liu, Fabi Zhang, Haiou Li, XinXin Hu, Ying Peng, Chengyan Liu, Min Hong
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Materials Today Advances
Subjects:
Phase change memory
Resistance drift
Aging
Crystallization kinetics
β-relaxation
Fragile-to-strong
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049825000165
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