Coulomb Spike Model of Radiation Damage in Wide Band-Gap Insulators
A novel Coulomb spike concept is applied to the radiation damage induced in LiF and SiO<sub>2</sub> with about the same mass density (~2.65 g cm<sup>−3</sup>) by <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline">...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-08-01
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| Series: | Quantum Beam Science |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2412-382X/8/3/20 |
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