Coulomb Spike Model of Radiation Damage in Wide Band-Gap Insulators

A novel Coulomb spike concept is applied to the radiation damage induced in LiF and SiO<sub>2</sub> with about the same mass density (~2.65 g cm<sup>−3</sup>) by <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline">...

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Bibliographic Details
Main Authors: Jean-Marc Costantini, Tatsuhiko Ogawa
Format: Article
Language:English
Published: MDPI AG 2024-08-01
Series:Quantum Beam Science
Subjects:
Online Access:https://www.mdpi.com/2412-382X/8/3/20
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