Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tunnel barrier. The FL usually consists of several su...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
International Institute of Informatics and Cybernetics
2022-08-01
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| Series: | Journal of Systemics, Cybernetics and Informatics |
| Subjects: | |
| Online Access: | http://www.iiisci.org/Journal/PDV/sci/pdfs/SA265RK22.pdf
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