Electronic Properties of Atomic Layer Deposited HfO<sub>2</sub> Thin Films on InGaAs Compared to HfO<sub>2</sub>/GaAs Semiconductors

Electronic Properties of Atomic Layer Deposited HfO<sub>2</sub> Thin Films on InGaAs Compared to HfO<sub>2</sub>/GaAs Semiconductors

This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO<sub>2</sub>/InGaAs-based MOS capacitor, in which growth temperatures...

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Bibliographic Details
Main Authors: Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan
Format: Article
Language:English
Published: MDPI AG 2024-08-01
Series:Crystals
Subjects:
atomic layer deposition
capacitance–voltage
semiconductor
high-k dielectrics
Online Access:https://www.mdpi.com/2073-4352/14/9/753
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