Residual Stress in Cu Sputtered Films on Glass Substrates at Different Substrate Temperatures
Copper films of 300 nm thickness deposited by planar magnetron sputtering on glass substrates, for substrate temperatures between 300 and 500 K, and deposition rate of 10 ?s?1. Microstructure of these films was obtained by X-ray diffraction, while the texture mode of diffractometer was used for stre...
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| Format: | Article |
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| Language: | English |
| Published: |
University of Tehran
2004-09-01
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| Series: | Journal of Sciences, Islamic Republic of Iran |
| Online Access: | https://jsciences.ut.ac.ir/article_31608_f0038ac507f1b32ea9f29138954f9ab7.pdf |
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| Summary: | Copper films of 300 nm thickness deposited by planar magnetron sputtering on glass substrates, for substrate temperatures between 300 and 500 K, and deposition rate of 10 ?s?1. Microstructure of these films was obtained by X-ray diffraction, while the texture mode of diffractometer was used for stress measurement by the sin2? technique. The components of the stress tensor are obtained using measurements at three different ? angles of 0, 45 and 90 degrees by proposed technique in this work. The relation between stress in these films and the processes in film growth through structure zone model (SZM) is explained. |
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| ISSN: | 1016-1104 2345-6914 |