Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)

Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using the 2D numerical simulator. The results demonst...

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Bibliographic Details
Main Authors: DeviВ Dass, RakeshВ Vaid
Format: Article
Language:English
Published: Sumy State University 2017-07-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04007.pdf
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