Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)
Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using the 2D numerical simulator. The results demonst...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04007.pdf |
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