Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers

Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers

Abstract This study investigates thermal transport across nanocrystalline diamond/AlGaN (aluminum gallium nitride) interfaces, crucial for enhancing thermal management in AlGaN‐based electronic devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface...

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Bibliographic Details
Main Authors: Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Materials Interfaces
Subjects:
electrical devices
nanocrystalline diamond growth
thermal management
thermal transport at interfaces
ultra‐wide bandgap
Online Access:https://doi.org/10.1002/admi.202400575
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https://doi.org/10.1002/admi.202400575

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