Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics
We proposed a novel measurement method and system to measure the electrical characteristics of non-patterned semiconductor films to estimate the final device’s properties. The proposed method is based on measuring bottom-gate structure thin-film transistor (TFT) using the probe pins as source and dr...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-04-01
|
| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2024.2417923 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850233396692779008 |
|---|---|
| author | Kook Chul Moon Hwarim Im Gyohyeok Yun Hyoungsik Kim JungUn Na Changhwan Kim Yong-Sang Kim |
| author_facet | Kook Chul Moon Hwarim Im Gyohyeok Yun Hyoungsik Kim JungUn Na Changhwan Kim Yong-Sang Kim |
| author_sort | Kook Chul Moon |
| collection | DOAJ |
| description | We proposed a novel measurement method and system to measure the electrical characteristics of non-patterned semiconductor films to estimate the final device’s properties. The proposed method is based on measuring bottom-gate structure thin-film transistor (TFT) using the probe pins as source and drain electrodes. We carefully designed the array structure and material of the probe pin to effectively detect extremely low-level currents without patterned electrodes on the semiconductor film. The contact pressure was also carefully controlled through continuous monitoring using an implemented pressure sensor to ensure the reliability and reproducibility of the measured data. In addition, we developed a method of extracting device parameters, such as the threshold voltage and field-effect mobility, from the measured data, considering the geometric factor of the proposed method. Comparative analysis between the measurement results of the film sample using the proposed system and that of the final TFT sample exhibited similar results with slight deviations. Furthermore, the proposed system provided similar results under repetitive measurements. Consequently, the proposed method and system successfully demonstrated the estimation of the final TFT’s properties by measuring the electrical characteristics of the non-patterned semiconductor film with excellent reliability, highlighting the possibility of effectively reducing costs for development and fabrication. |
| format | Article |
| id | doaj-art-444f4ddc5f024a49bf9b672155e8cf05 |
| institution | OA Journals |
| issn | 1598-0316 2158-1606 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Information Display |
| spelling | doaj-art-444f4ddc5f024a49bf9b672155e8cf052025-08-20T02:02:57ZengTaylor & Francis GroupJournal of Information Display1598-03162158-16062025-04-0126216717510.1080/15980316.2024.2417923Novel electrical characteristic measurement system of semiconductor films for estimating device characteristicsKook Chul Moon0Hwarim Im1Gyohyeok Yun2Hyoungsik Kim3JungUn Na4Changhwan Kim5Yong-Sang Kim6Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, KoreaDepartment of Electrical and Electronics Engineering, Konkuk University, Seoul, KoreaDepartment of System Development, EnVigth, Hwaseong, KoreaDepartment of System Development, EnVigth, Hwaseong, KoreaDepartment of System Development, EnVigth, Hwaseong, KoreaDepartment of Electromagnetic Analysis Team, Tae Sung S&E, Seoul, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, KoreaWe proposed a novel measurement method and system to measure the electrical characteristics of non-patterned semiconductor films to estimate the final device’s properties. The proposed method is based on measuring bottom-gate structure thin-film transistor (TFT) using the probe pins as source and drain electrodes. We carefully designed the array structure and material of the probe pin to effectively detect extremely low-level currents without patterned electrodes on the semiconductor film. The contact pressure was also carefully controlled through continuous monitoring using an implemented pressure sensor to ensure the reliability and reproducibility of the measured data. In addition, we developed a method of extracting device parameters, such as the threshold voltage and field-effect mobility, from the measured data, considering the geometric factor of the proposed method. Comparative analysis between the measurement results of the film sample using the proposed system and that of the final TFT sample exhibited similar results with slight deviations. Furthermore, the proposed system provided similar results under repetitive measurements. Consequently, the proposed method and system successfully demonstrated the estimation of the final TFT’s properties by measuring the electrical characteristics of the non-patterned semiconductor film with excellent reliability, highlighting the possibility of effectively reducing costs for development and fabrication.https://www.tandfonline.com/doi/10.1080/15980316.2024.2417923Measurement systemmetal–oxide semiconductorthin filmthin-film transistorproperty estimation |
| spellingShingle | Kook Chul Moon Hwarim Im Gyohyeok Yun Hyoungsik Kim JungUn Na Changhwan Kim Yong-Sang Kim Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics Journal of Information Display Measurement system metal–oxide semiconductor thin film thin-film transistor property estimation |
| title | Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| title_full | Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| title_fullStr | Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| title_full_unstemmed | Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| title_short | Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| title_sort | novel electrical characteristic measurement system of semiconductor films for estimating device characteristics |
| topic | Measurement system metal–oxide semiconductor thin film thin-film transistor property estimation |
| url | https://www.tandfonline.com/doi/10.1080/15980316.2024.2417923 |
| work_keys_str_mv | AT kookchulmoon novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT hwarimim novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT gyohyeokyun novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT hyoungsikkim novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT jungunna novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT changhwankim novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics AT yongsangkim novelelectricalcharacteristicmeasurementsystemofsemiconductorfilmsforestimatingdevicecharacteristics |