Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling
This study investigates the impact of modeling the aluminum (Al) metallization layer as an integrated part of the chip model, versus as an individual component, on the results of electrical–thermal analysis of power semiconductor packages using Finite Element Analysis (FEA), ANSYS 2024 R2. The resul...
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MDPI AG
2025-05-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/18/10/2457 |
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| author | Na-Yeon Choi Sang-Gi Kim Sung-Uk Zhang |
| author_facet | Na-Yeon Choi Sang-Gi Kim Sung-Uk Zhang |
| author_sort | Na-Yeon Choi |
| collection | DOAJ |
| description | This study investigates the impact of modeling the aluminum (Al) metallization layer as an integrated part of the chip model, versus as an individual component, on the results of electrical–thermal analysis of power semiconductor packages using Finite Element Analysis (FEA), ANSYS 2024 R2. The results showed that modeling the aluminum metallization layer separately exhibited high consistency with actual thermal imaging data. Furthermore, based on these findings, we observed through simulations that the aluminum metallization layer plays a key role in improving the uniformity of current density and temperature distribution within the chip. Using the aluminum metallization layer model, we optimized the thickness, material, and design of the metallization layer, as well as the bonding wire material through the design of experiments (DOE) methodology. Under the optimized conditions, an optimal design is proposed to minimize the voltage–current ratio (V<sub>DS</sub>/I<sub>DS</sub>), maximum junction temperature, strain, and von Mises stress. This study systematically examines the influence of aluminum metallization layer modeling on FEA-based power semiconductor package simulations and is expected to serve as a valuable reference for future power device design utilizing finite element analysis. |
| format | Article |
| id | doaj-art-444f1ea942f7492ab848aad23939d5cc |
| institution | DOAJ |
| issn | 1996-1073 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj-art-444f1ea942f7492ab848aad23939d5cc2025-08-20T03:14:31ZengMDPI AGEnergies1996-10732025-05-011810245710.3390/en18102457Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer ModelingNa-Yeon Choi0Sang-Gi Kim1Sung-Uk Zhang2Digital Twin Laboratory, Dong-Eui University, 176 Eomgwang-ro, Busan 47340, Republic of KoreaEyeq Lab, Anyang 14057, Republic of KoreaDigital Twin Laboratory, Dong-Eui University, 176 Eomgwang-ro, Busan 47340, Republic of KoreaThis study investigates the impact of modeling the aluminum (Al) metallization layer as an integrated part of the chip model, versus as an individual component, on the results of electrical–thermal analysis of power semiconductor packages using Finite Element Analysis (FEA), ANSYS 2024 R2. The results showed that modeling the aluminum metallization layer separately exhibited high consistency with actual thermal imaging data. Furthermore, based on these findings, we observed through simulations that the aluminum metallization layer plays a key role in improving the uniformity of current density and temperature distribution within the chip. Using the aluminum metallization layer model, we optimized the thickness, material, and design of the metallization layer, as well as the bonding wire material through the design of experiments (DOE) methodology. Under the optimized conditions, an optimal design is proposed to minimize the voltage–current ratio (V<sub>DS</sub>/I<sub>DS</sub>), maximum junction temperature, strain, and von Mises stress. This study systematically examines the influence of aluminum metallization layer modeling on FEA-based power semiconductor package simulations and is expected to serve as a valuable reference for future power device design utilizing finite element analysis.https://www.mdpi.com/1996-1073/18/10/2457aluminum metallization layerfinite element analysis (FEA)electro-thermal analysispower semiconductor packaging |
| spellingShingle | Na-Yeon Choi Sang-Gi Kim Sung-Uk Zhang Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling Energies aluminum metallization layer finite element analysis (FEA) electro-thermal analysis power semiconductor packaging |
| title | Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling |
| title_full | Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling |
| title_fullStr | Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling |
| title_full_unstemmed | Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling |
| title_short | Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling |
| title_sort | enhanced simulation accuracy and design optimization in power semiconductors through individual aluminum metallization layer modeling |
| topic | aluminum metallization layer finite element analysis (FEA) electro-thermal analysis power semiconductor packaging |
| url | https://www.mdpi.com/1996-1073/18/10/2457 |
| work_keys_str_mv | AT nayeonchoi enhancedsimulationaccuracyanddesignoptimizationinpowersemiconductorsthroughindividualaluminummetallizationlayermodeling AT sanggikim enhancedsimulationaccuracyanddesignoptimizationinpowersemiconductorsthroughindividualaluminummetallizationlayermodeling AT sungukzhang enhancedsimulationaccuracyanddesignoptimizationinpowersemiconductorsthroughindividualaluminummetallizationlayermodeling |