Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling
This study investigates the impact of modeling the aluminum (Al) metallization layer as an integrated part of the chip model, versus as an individual component, on the results of electrical–thermal analysis of power semiconductor packages using Finite Element Analysis (FEA), ANSYS 2024 R2. The resul...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/18/10/2457 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|