Demonstration of InGaN full-color monolithic micro-LED display using stacking and selective removal of the light-emitting layer
A full-color monolithic micro-light-emitting diode (LED) display based on InGaN quantum wells is demonstrated. We stacked red, green, and blue (RGB) light-emitting layers and selectively removed and regrew a p-type layer to create distinct areas on a single chip that emitted RGB colors. Subsequently...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adb5ec |
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