High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition
Abstract 2D wide bandgap oxide semiconductors with sub‐5 nm thickness have recently attracted tremendous attention owing to their unique electronic characteristics. Particularly, they can be used as promising channel materials for back‐end‐of‐line monolithic 3D integration. However, achieving both h...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400986 |
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