Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer
We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/605204 |
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| _version_ | 1832549849327730688 |
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| author | T. F. Gundogdu M. Gökkavas E. Ozbay |
| author_facet | T. F. Gundogdu M. Gökkavas E. Ozbay |
| author_sort | T. F. Gundogdu |
| collection | DOAJ |
| description | We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer. |
| format | Article |
| id | doaj-art-42740f040e3e42b6809be7e63e1d372e |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-42740f040e3e42b6809be7e63e1d372e2025-02-03T06:08:19ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/605204605204Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap LayerT. F. Gundogdu0M. Gökkavas1E. Ozbay2Nanotechnology Research Center (NANOTAM), Bilkent University, 06800 Ankara, TurkeyNanotechnology Research Center (NANOTAM), Bilkent University, 06800 Ankara, TurkeyNanotechnology Research Center (NANOTAM), Bilkent University, 06800 Ankara, TurkeyWe studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer.http://dx.doi.org/10.1155/2014/605204 |
| spellingShingle | T. F. Gundogdu M. Gökkavas E. Ozbay Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer Advances in Materials Science and Engineering |
| title | Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer |
| title_full | Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer |
| title_fullStr | Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer |
| title_full_unstemmed | Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer |
| title_short | Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer |
| title_sort | improving the efficiency enhancement of photonic crystal based ingan solar cell by using a gan cap layer |
| url | http://dx.doi.org/10.1155/2014/605204 |
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