Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer
We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/605204 |
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