Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis

We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding...

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Bibliographic Details
Main Authors: Kazuma Torii, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami
Format: Article
Language:English
Published: Taylor & Francis Group 2025-12-01
Series:Science and Technology of Advanced Materials
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Online Access:https://www.tandfonline.com/doi/10.1080/14686996.2025.2512703
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