Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/5863632 |
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| author | Chao Zhang Jianjun Song Jie Zhang Shulin Liu |
| author_facet | Chao Zhang Jianjun Song Jie Zhang Shulin Liu |
| author_sort | Chao Zhang |
| collection | DOAJ |
| description | The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance. Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si. In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si0.2Ge0.8) on a Si substrate was established (temperature distribution physical model of Si0.2Ge0.8 epitaxial layer under different laser power, Si0.2Ge0.8 epitaxial layer thickness, and initial temperature). The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization. |
| format | Article |
| id | doaj-art-419a8fcfb0e04019bbc37cc5ded6c6ca |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-419a8fcfb0e04019bbc37cc5ded6c6ca2025-08-20T03:55:40ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/58636325863632Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si SubstrateChao Zhang0Jianjun Song1Jie Zhang2Shulin Liu3School of Electrical and Control Engineering, Xi’an University of Science and Technology, Xi’an 710054, ChinaKey Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Electrical and Control Engineering, Xi’an University of Science and Technology, Xi’an 710054, ChinaThe high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance. Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si. In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si0.2Ge0.8) on a Si substrate was established (temperature distribution physical model of Si0.2Ge0.8 epitaxial layer under different laser power, Si0.2Ge0.8 epitaxial layer thickness, and initial temperature). The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization.http://dx.doi.org/10.1155/2018/5863632 |
| spellingShingle | Chao Zhang Jianjun Song Jie Zhang Shulin Liu Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate Advances in Condensed Matter Physics |
| title | Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate |
| title_full | Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate |
| title_fullStr | Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate |
| title_full_unstemmed | Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate |
| title_short | Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate |
| title_sort | thermophysics simulation of laser recrystallization of high ge content sige on si substrate |
| url | http://dx.doi.org/10.1155/2018/5863632 |
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