Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/5863632 |
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