Effect of Uniaxial Pressure on the 2-Conductivity of Heavily Doped p-Si(B)

The paper presents the results of research tensoresistive effect in strongly deformed weakisolator p - Si(B) crystals in the range of σ2-conductivity for the main crystallographic directions , and . The work aims to investigate the influence of strong uniaxial pressure on impurity σ2-conductivity...

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Bibliographic Details
Main Authors: L.I. Panasjuk, V.V. Kolomoets, V.M. Ermakov, S.А. Fedosov
Format: Article
Language:English
Published: Sumy State University 2017-02-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01020.pdf
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