Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occ...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213494 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|