Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions
The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-sa...
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MDPI AG
2025-02-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/15/5/2351 |
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| author | Bingrui Liu Lan Chen |
| author_facet | Bingrui Liu Lan Chen |
| author_sort | Bingrui Liu |
| collection | DOAJ |
| description | The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-saturated power–law model containing oxide defects. The compact model employs different parameters in different carrier energy regions to improve the accuracy of the model. The predictions of the model fit well with experimental data extracted from the literature and the TCAD data, proving the validity of the model. Meanwhile, the model is used in this paper to predict and analyze the HCI’s degradation as well as lifetime under different conditions. |
| format | Article |
| id | doaj-art-402d2316348741508f3bd9cb0cbfa01f |
| institution | DOAJ |
| issn | 2076-3417 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj-art-402d2316348741508f3bd9cb0cbfa01f2025-08-20T02:52:41ZengMDPI AGApplied Sciences2076-34172025-02-01155235110.3390/app15052351Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different ConditionsBingrui Liu0Lan Chen1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaUniversity of Chinese Academy of Sciences, Beijing 101408, ChinaThe HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-saturated power–law model containing oxide defects. The compact model employs different parameters in different carrier energy regions to improve the accuracy of the model. The predictions of the model fit well with experimental data extracted from the literature and the TCAD data, proving the validity of the model. Meanwhile, the model is used in this paper to predict and analyze the HCI’s degradation as well as lifetime under different conditions.https://www.mdpi.com/2076-3417/15/5/2351hot carrier injectionbulk FinFETself-heating effectself-saturation modelreaction–diffusion modelmultiple vibrational excitation |
| spellingShingle | Bingrui Liu Lan Chen Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions Applied Sciences hot carrier injection bulk FinFET self-heating effect self-saturation model reaction–diffusion model multiple vibrational excitation |
| title | Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions |
| title_full | Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions |
| title_fullStr | Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions |
| title_full_unstemmed | Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions |
| title_short | Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions |
| title_sort | self heating effect coupled compact model to predict hot carrier injection degradation in nanoscale bulk finfets under different conditions |
| topic | hot carrier injection bulk FinFET self-heating effect self-saturation model reaction–diffusion model multiple vibrational excitation |
| url | https://www.mdpi.com/2076-3417/15/5/2351 |
| work_keys_str_mv | AT bingruiliu selfheatingeffectcoupledcompactmodeltopredicthotcarrierinjectiondegradationinnanoscalebulkfinfetsunderdifferentconditions AT lanchen selfheatingeffectcoupledcompactmodeltopredicthotcarrierinjectiondegradationinnanoscalebulkfinfetsunderdifferentconditions |