Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions

The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-sa...

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Bibliographic Details
Main Authors: Bingrui Liu, Lan Chen
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/15/5/2351
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