Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions
The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-sa...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/5/2351 |
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