Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon
Abstract Tellurium‐hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time‐resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two ph...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400417 |
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