Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon

Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon

Abstract Tellurium‐hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time‐resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two ph...

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Bibliographic Details
Main Authors: KM Ashikur Rahman, Mohd Saif Shaikh, Qianao Yue, S. Senali Dissanayake, Mao Wang, Shengqiang Zhou, Meng‐Ju Sher
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
hyperdoping
photoconductivity
time‐resolved THz spectroscopy (TRTS)
transient conductivity
Online Access:https://doi.org/10.1002/aelm.202400417
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https://doi.org/10.1002/aelm.202400417

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