Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon
Abstract Tellurium‐hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time‐resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two ph...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400417 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849769906182029312 |
|---|---|
| author | KM Ashikur Rahman Mohd Saif Shaikh Qianao Yue S. Senali Dissanayake Mao Wang Shengqiang Zhou Meng‐Ju Sher |
| author_facet | KM Ashikur Rahman Mohd Saif Shaikh Qianao Yue S. Senali Dissanayake Mao Wang Shengqiang Zhou Meng‐Ju Sher |
| author_sort | KM Ashikur Rahman |
| collection | DOAJ |
| description | Abstract Tellurium‐hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time‐resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two photoexcitation wavelengths enable us to understand the temperature‐dependent carrier transport in the hyperdoped region in comparison with the Si region. Temperature significantly influences the magnitude of transient conductivity and decay time when photoexcited by light with a wavelength of 400 nm. Due to the differential mobilities in the Si and hyperdoped regions, such dependence is absent under 266‐nm excitation. Consistent with the literature, the charge‐carrier lifetime decreases with increasing dopant concentration. It is found that the photoconductivity becomes less temperature‐dependent as the dopant concentration increases. In the literature, the photodetection range of Si:Te extends to a wavelength of 5.0 µm at a temperature of 20 K. The simulation shows that carrier diffusion, driven by concentration gradients, is strongly temperature dependent and impacts transient photoconductivity decay curves. The simulation also revealed that, in the hyperdoped regions, the carrier recombination rate remains independent of temperature. |
| format | Article |
| id | doaj-art-401dad8d251c4ad386d8118b27988ef2 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-401dad8d251c4ad386d8118b27988ef22025-08-20T03:03:14ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-04-01114n/an/a10.1002/aelm.202400417Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped SiliconKM Ashikur Rahman0Mohd Saif Shaikh1Qianao Yue2S. Senali Dissanayake3Mao Wang4Shengqiang Zhou5Meng‐Ju Sher6Wesleyan University Middletown Connecticut 06459 USAHelmholtz‐Zentrum Dresden‐Rossendorf Institute of Ion Beam Physics and Materials Research Bautzner Landstasse 400 01328 Dresden GermanyWesleyan University Middletown Connecticut 06459 USAWesleyan University Middletown Connecticut 06459 USAHelmholtz‐Zentrum Dresden‐Rossendorf Institute of Ion Beam Physics and Materials Research Bautzner Landstasse 400 01328 Dresden GermanyHelmholtz‐Zentrum Dresden‐Rossendorf Institute of Ion Beam Physics and Materials Research Bautzner Landstasse 400 01328 Dresden GermanyWesleyan University Middletown Connecticut 06459 USAAbstract Tellurium‐hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time‐resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si hyperdoped with 0.5, 1, and 2%. The two photoexcitation wavelengths enable us to understand the temperature‐dependent carrier transport in the hyperdoped region in comparison with the Si region. Temperature significantly influences the magnitude of transient conductivity and decay time when photoexcited by light with a wavelength of 400 nm. Due to the differential mobilities in the Si and hyperdoped regions, such dependence is absent under 266‐nm excitation. Consistent with the literature, the charge‐carrier lifetime decreases with increasing dopant concentration. It is found that the photoconductivity becomes less temperature‐dependent as the dopant concentration increases. In the literature, the photodetection range of Si:Te extends to a wavelength of 5.0 µm at a temperature of 20 K. The simulation shows that carrier diffusion, driven by concentration gradients, is strongly temperature dependent and impacts transient photoconductivity decay curves. The simulation also revealed that, in the hyperdoped regions, the carrier recombination rate remains independent of temperature.https://doi.org/10.1002/aelm.202400417hyperdopingphotoconductivitytime‐resolved THz spectroscopy (TRTS)transient conductivity |
| spellingShingle | KM Ashikur Rahman Mohd Saif Shaikh Qianao Yue S. Senali Dissanayake Mao Wang Shengqiang Zhou Meng‐Ju Sher Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon Advanced Electronic Materials hyperdoping photoconductivity time‐resolved THz spectroscopy (TRTS) transient conductivity |
| title | Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon |
| title_full | Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon |
| title_fullStr | Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon |
| title_full_unstemmed | Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon |
| title_short | Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon |
| title_sort | temperature dependent dynamics of charge carriers in tellurium hyperdoped silicon |
| topic | hyperdoping photoconductivity time‐resolved THz spectroscopy (TRTS) transient conductivity |
| url | https://doi.org/10.1002/aelm.202400417 |
| work_keys_str_mv | AT kmashikurrahman temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT mohdsaifshaikh temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT qianaoyue temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT ssenalidissanayake temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT maowang temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT shengqiangzhou temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon AT mengjusher temperaturedependentdynamicsofchargecarriersintelluriumhyperdopedsilicon |