Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations
Abstract The double quantum well structure, composed of GaAs/AlGaAs doped with silicon atoms, was investigated was analyzed under varying temperature and axial pressure conditions by simultaneously numerically resolving the Schrödinger and Poisson equations. Subsequently, the effects of pressure and...
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| Format: | Article |
| Language: | English |
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Springer
2025-08-01
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| Series: | Discover Applied Sciences |
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| Online Access: | https://doi.org/10.1007/s42452-025-07462-8 |
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| author | M. Jaouane R. Arraoui A. Ed-Dahmouny H. M. Althib A. Alkhaldi A. Fakkahi H. Azmi K. El-Bakkari H. El Ghazi A. Sali |
| author_facet | M. Jaouane R. Arraoui A. Ed-Dahmouny H. M. Althib A. Alkhaldi A. Fakkahi H. Azmi K. El-Bakkari H. El Ghazi A. Sali |
| author_sort | M. Jaouane |
| collection | DOAJ |
| description | Abstract The double quantum well structure, composed of GaAs/AlGaAs doped with silicon atoms, was investigated was analyzed under varying temperature and axial pressure conditions by simultaneously numerically resolving the Schrödinger and Poisson equations. Subsequently, the effects of pressure and temperature were found to significantly influence electron probability distribution, energy levels, Fermi energy, and electron density for both scenarios: a single doped quantum well and two doped quantum wells. An increase in pressure or temperature causes the energy levels to shift to lower values, and the electron becomes less localized within the confinement region. We hope that our simulation results will be utilized by investors to fabricate electronic devices capable of operating under varying external pressures and temperatures. |
| format | Article |
| id | doaj-art-3fc2a1370bbc474f801af376e7090e5b |
| institution | Kabale University |
| issn | 3004-9261 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Applied Sciences |
| spelling | doaj-art-3fc2a1370bbc474f801af376e7090e5b2025-08-20T03:46:24ZengSpringerDiscover Applied Sciences3004-92612025-08-017811310.1007/s42452-025-07462-8Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variationsM. Jaouane0R. Arraoui1A. Ed-Dahmouny2H. M. Althib3A. Alkhaldi4A. Fakkahi5H. Azmi6K. El-Bakkari7H. El Ghazi8A. Sali9LPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityLPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityLaRSI Laboratory, Faculty of Sciences and Technology, Sidi Mohamed Ben Abdellah UniversityDepartment of Physics, College of Science, Imam Abdulrahman Bin Faisal UniversityDepartment of Physics, College of Science, Imam Abdulrahman Bin Faisal UniversityLPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityLPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityLPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityMPIS Group, ENSAM Laboratory, Hassan II UniversityLPS Laboratory, Faculty of Sciences Dhar El Mahraz, Sidi Mohamed Ben Abdellah UniversityAbstract The double quantum well structure, composed of GaAs/AlGaAs doped with silicon atoms, was investigated was analyzed under varying temperature and axial pressure conditions by simultaneously numerically resolving the Schrödinger and Poisson equations. Subsequently, the effects of pressure and temperature were found to significantly influence electron probability distribution, energy levels, Fermi energy, and electron density for both scenarios: a single doped quantum well and two doped quantum wells. An increase in pressure or temperature causes the energy levels to shift to lower values, and the electron becomes less localized within the confinement region. We hope that our simulation results will be utilized by investors to fabricate electronic devices capable of operating under varying external pressures and temperatures.https://doi.org/10.1007/s42452-025-07462-8Fermi energyIonized dopantsAxial pressureTemperatureSchrodinger–Poisson equations |
| spellingShingle | M. Jaouane R. Arraoui A. Ed-Dahmouny H. M. Althib A. Alkhaldi A. Fakkahi H. Azmi K. El-Bakkari H. El Ghazi A. Sali Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations Discover Applied Sciences Fermi energy Ionized dopants Axial pressure Temperature Schrodinger–Poisson equations |
| title | Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations |
| title_full | Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations |
| title_fullStr | Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations |
| title_full_unstemmed | Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations |
| title_short | Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations |
| title_sort | numerical modeling of the electronic structure of si doped n type gaas algaas double quantum wells under hydrostatic pressure and temperature variations |
| topic | Fermi energy Ionized dopants Axial pressure Temperature Schrodinger–Poisson equations |
| url | https://doi.org/10.1007/s42452-025-07462-8 |
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