Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations

Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations

Abstract The double quantum well structure, composed of GaAs/AlGaAs doped with silicon atoms, was investigated was analyzed under varying temperature and axial pressure conditions by simultaneously numerically resolving the Schrödinger and Poisson equations. Subsequently, the effects of pressure and...

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Main Authors: M. Jaouane, R. Arraoui, A. Ed-Dahmouny, H. M. Althib, A. Alkhaldi, A. Fakkahi, H. Azmi, K. El-Bakkari, H. El Ghazi, A. Sali
Format: Article
Language:English
Published: Springer 2025-08-01
Series:Discover Applied Sciences
Subjects:
Fermi energy
Ionized dopants
Axial pressure
Temperature
Schrodinger–Poisson equations
Online Access:https://doi.org/10.1007/s42452-025-07462-8
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https://doi.org/10.1007/s42452-025-07462-8

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