Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding
Abstract With the rapid development of semiconductors, the number of materials needed to be polished sharply increases. The material properties vary significantly, posing challenges to chemical mechanical polishing (CMP). Accordingly, the study aimed to classify the material removal mechanism. Based...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Tsinghua University Press
2023-12-01
|
| Series: | Friction |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40544-023-0799-6 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850257738817339392 |
|---|---|
| author | Yuan Wu Liang Jiang Wenhui Li Jiaxin Zheng Yushan Chen Linmao Qian |
| author_facet | Yuan Wu Liang Jiang Wenhui Li Jiaxin Zheng Yushan Chen Linmao Qian |
| author_sort | Yuan Wu |
| collection | DOAJ |
| description | Abstract With the rapid development of semiconductors, the number of materials needed to be polished sharply increases. The material properties vary significantly, posing challenges to chemical mechanical polishing (CMP). Accordingly, the study aimed to classify the material removal mechanism. Based on the CMP and atomic force microscopy results, the six representative metals can be preliminarily classified into two groups, presumably due to different material removal modes. From the tribology perspective, the first group of Cu, Co, and Ni may mainly rely on the mechanical plowing effect. After adding H2O2, corrosion can be first enhanced and then suppressed, affecting the surface mechanical strength. Consequently, the material removal rate (MRR) and the surface roughness increase and decrease. By comparison, the second group of Ta, Ru, and Ti may primarily depend on the chemical bonding effect. Adding H2O2 can promote oxidation, increasing interfacial chemical bonds. Therefore, the MRR increases, and the surface roughness decreases and levels off. In addition, CMP can be regulated by tuning the synergistic effect of oxidation, complexation, and dissolution for mechanical plowing, while tuning the synergistic effect of oxidation and ionic strength for chemical bonding. The findings provide mechanistic insight into the material removal mechanism in CMP. |
| format | Article |
| id | doaj-art-3f504fd9ceb44ac086b7c685b55ccfb4 |
| institution | OA Journals |
| issn | 2223-7690 2223-7704 |
| language | English |
| publishDate | 2023-12-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Friction |
| spelling | doaj-art-3f504fd9ceb44ac086b7c685b55ccfb42025-08-20T01:56:20ZengTsinghua University PressFriction2223-76902223-77042023-12-0112589790510.1007/s40544-023-0799-6Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bondingYuan Wu0Liang Jiang1Wenhui Li2Jiaxin Zheng3Yushan Chen4Linmao Qian5Tribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityTribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityTribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityTribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityTribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityTribology Research Institute, State Key Laboratory of Rail Transit Vehicle System, Southwest Jiaotong UniversityAbstract With the rapid development of semiconductors, the number of materials needed to be polished sharply increases. The material properties vary significantly, posing challenges to chemical mechanical polishing (CMP). Accordingly, the study aimed to classify the material removal mechanism. Based on the CMP and atomic force microscopy results, the six representative metals can be preliminarily classified into two groups, presumably due to different material removal modes. From the tribology perspective, the first group of Cu, Co, and Ni may mainly rely on the mechanical plowing effect. After adding H2O2, corrosion can be first enhanced and then suppressed, affecting the surface mechanical strength. Consequently, the material removal rate (MRR) and the surface roughness increase and decrease. By comparison, the second group of Ta, Ru, and Ti may primarily depend on the chemical bonding effect. Adding H2O2 can promote oxidation, increasing interfacial chemical bonds. Therefore, the MRR increases, and the surface roughness decreases and levels off. In addition, CMP can be regulated by tuning the synergistic effect of oxidation, complexation, and dissolution for mechanical plowing, while tuning the synergistic effect of oxidation and ionic strength for chemical bonding. The findings provide mechanistic insight into the material removal mechanism in CMP.https://doi.org/10.1007/s40544-023-0799-6Chemical mechanical polishingcorrosion wearmaterial removal modemechanical plowingchemical bonding |
| spellingShingle | Yuan Wu Liang Jiang Wenhui Li Jiaxin Zheng Yushan Chen Linmao Qian Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding Friction Chemical mechanical polishing corrosion wear material removal mode mechanical plowing chemical bonding |
| title | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding |
| title_full | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding |
| title_fullStr | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding |
| title_full_unstemmed | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding |
| title_short | Two material removal modes in chemical mechanical polishing: mechanical plowing vs. chemical bonding |
| title_sort | two material removal modes in chemical mechanical polishing mechanical plowing vs chemical bonding |
| topic | Chemical mechanical polishing corrosion wear material removal mode mechanical plowing chemical bonding |
| url | https://doi.org/10.1007/s40544-023-0799-6 |
| work_keys_str_mv | AT yuanwu twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding AT liangjiang twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding AT wenhuili twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding AT jiaxinzheng twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding AT yushanchen twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding AT linmaoqian twomaterialremovalmodesinchemicalmechanicalpolishingmechanicalplowingvschemicalbonding |