ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM

ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM

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Bibliographic Details
Main Authors:	Jeong-Min Park, Sein Lee, Junseo Lee, Jang-Yeon Kwon
Format:	Article
Language:	English
Published:	American Chemical Society 2024-12-01
Series:	ACS Omega
Online Access:	https://doi.org/10.1021/acsomega.4c08274
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