On the Melting and Disordering of Thin Epitaxial Films
The disordering of thin films formed on the (100) plane of the face centred cubic (fcc) crystal was studied by the Monte Carlo simulation method. It was shown that the adsorbed films, which order into the (1 × 1) structure in each layer at low temperatures, disorder in a layer-by-layer mode, at leas...
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| Format: | Article |
| Language: | English |
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SAGE Publishing
2007-09-01
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| Series: | Adsorption Science & Technology |
| Online Access: | https://doi.org/10.1260/0263-6174.25.7.451 |
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| author | A. Patrykiejew S. Sokolowski |
| author_facet | A. Patrykiejew S. Sokolowski |
| author_sort | A. Patrykiejew |
| collection | DOAJ |
| description | The disordering of thin films formed on the (100) plane of the face centred cubic (fcc) crystal was studied by the Monte Carlo simulation method. It was shown that the adsorbed films, which order into the (1 × 1) structure in each layer at low temperatures, disorder in a layer-by-layer mode, at least for films with thicknesses of up to 12 layers. It was also demonstrated that, with increasing film thickness, the temperature at which the film disorders depended on the strain resulting from the mismatch between the sizes of the adsorbate atoms and the surface lattice. |
| format | Article |
| id | doaj-art-3eebb095973648ab85f68441681dd344 |
| institution | Kabale University |
| issn | 0263-6174 2048-4038 |
| language | English |
| publishDate | 2007-09-01 |
| publisher | SAGE Publishing |
| record_format | Article |
| series | Adsorption Science & Technology |
| spelling | doaj-art-3eebb095973648ab85f68441681dd3442025-01-02T22:37:34ZengSAGE PublishingAdsorption Science & Technology0263-61742048-40382007-09-012510.1260/0263-6174.25.7.451On the Melting and Disordering of Thin Epitaxial FilmsA. PatrykiejewS. SokolowskiThe disordering of thin films formed on the (100) plane of the face centred cubic (fcc) crystal was studied by the Monte Carlo simulation method. It was shown that the adsorbed films, which order into the (1 × 1) structure in each layer at low temperatures, disorder in a layer-by-layer mode, at least for films with thicknesses of up to 12 layers. It was also demonstrated that, with increasing film thickness, the temperature at which the film disorders depended on the strain resulting from the mismatch between the sizes of the adsorbate atoms and the surface lattice.https://doi.org/10.1260/0263-6174.25.7.451 |
| spellingShingle | A. Patrykiejew S. Sokolowski On the Melting and Disordering of Thin Epitaxial Films Adsorption Science & Technology |
| title | On the Melting and Disordering of Thin Epitaxial Films |
| title_full | On the Melting and Disordering of Thin Epitaxial Films |
| title_fullStr | On the Melting and Disordering of Thin Epitaxial Films |
| title_full_unstemmed | On the Melting and Disordering of Thin Epitaxial Films |
| title_short | On the Melting and Disordering of Thin Epitaxial Films |
| title_sort | on the melting and disordering of thin epitaxial films |
| url | https://doi.org/10.1260/0263-6174.25.7.451 |
| work_keys_str_mv | AT apatrykiejew onthemeltinganddisorderingofthinepitaxialfilms AT ssokolowski onthemeltinganddisorderingofthinepitaxialfilms |