Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Abstract This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) channel. a‐IGZO generally has an n‐type character with a high bandgap (>3 eV) and a high density of gap states, h...

Full description

Saved in:
Bibliographic Details
Main Authors: Jae Hoon Lee, Yonghee Lee, Joon‐Kyu Han, Kyung Do Kim, Seung Ryong Byun, Hyeon Woo Park, Cheol Seong Hwang
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Advanced Electronic Materials
Subjects:
Al‐doped HfO2
amorphous IGZO
charge trapping
ferroelectric films
gate material
memory window
Online Access:https://doi.org/10.1002/aelm.202400516
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/aelm.202400516

Similar Items