Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable...
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Elsevier
2024-12-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724007241 |
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| author | Shih-Hung Cheng Ting-I Kuo Er-Feng Hsieh Wen-Jeng Hsueh |
| author_facet | Shih-Hung Cheng Ting-I Kuo Er-Feng Hsieh Wen-Jeng Hsueh |
| author_sort | Shih-Hung Cheng |
| collection | DOAJ |
| description | Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs. |
| format | Article |
| id | doaj-art-3e8e88ec4b4d47a48711cf64dffdf61b |
| institution | OA Journals |
| issn | 2211-3797 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj-art-3e8e88ec4b4d47a48711cf64dffdf61b2025-08-20T01:58:08ZengElsevierResults in Physics2211-37972024-12-016710803910.1016/j.rinp.2024.108039Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistorsShih-Hung Cheng0Ting-I Kuo1Er-Feng Hsieh2Wen-Jeng Hsueh3Spintronics Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, TaiwanSpintronics Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, TaiwanSpintronics Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, TaiwanCorresponding author.; Spintronics Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, TaiwanNegative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs.http://www.sciencedirect.com/science/article/pii/S2211379724007241Negative differential resistanceWeyl semimetalsTunable gateTransistorsPeak-to-valley current ratioCurrent density |
| spellingShingle | Shih-Hung Cheng Ting-I Kuo Er-Feng Hsieh Wen-Jeng Hsueh Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors Results in Physics Negative differential resistance Weyl semimetals Tunable gate Transistors Peak-to-valley current ratio Current density |
| title | Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors |
| title_full | Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors |
| title_fullStr | Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors |
| title_full_unstemmed | Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors |
| title_short | Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors |
| title_sort | room temperature negative differential resistance in gate tunable weyl semimetal transistors |
| topic | Negative differential resistance Weyl semimetals Tunable gate Transistors Peak-to-valley current ratio Current density |
| url | http://www.sciencedirect.com/science/article/pii/S2211379724007241 |
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