Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors

Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable...

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Bibliographic Details
Main Authors: Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh
Format: Article
Language:English
Published: Elsevier 2024-12-01
Series:Results in Physics
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Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724007241
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