Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies. In this study, we successfully demonstrate highly efficient SOT magnetization...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0248007 |
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