Improved Schottky junction analysis model
The intersection of the Fermi and impurity levels in the Schottky junction of boron-doped p-type diamond, a widely used p-type doping scheme for diamond, has been discovered. This indicates that the relationship between the ionization efficiency of boron impurities and their position in the junction...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2025.2488520 |
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