Optical Response Study of the Al/a-Sic:H Schottky Diode for Different Substrate Temperatures of the R.F. Sputtered a-Sic:H Thin Film
In the present work, Schottky diodes of Al/a-SiC:H included in the structure Al/a-SiC:H/c-Si(n)/Al were fabricated and their optical response was studied in the wavelength region from 350 nm up to 1000 nm, for different substrate temperatures, Ts (from 30°C up to 290°C) of the r.f. sputtered a-SiC:H...
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2003-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/0882751021000010627 |
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