A Comprehensive Review of Single Event Transients on Various MOS Devices

Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-Event Transients (SETs) are becoming an increasingly important problem in the design and reliability evaluation of semiconductor devices. This paper extensively reviews a physics-based analytical model cons...

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Bibliographic Details
Main Authors: P. S. Rajakumar, S. Satheesh Kumar
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10721587/
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