Mechanisms of forward current transport in vertical nanoscale devices: insights and applications

Mechanisms of forward current transport in vertical nanoscale devices: insights and applications

Current transport at metal/semiconductor interface becomes critical to determining ultimate limit in performance of two-dimensional (2D) electronic devices. In this work, we study output characteristics as well as carrier transport of the vertical Schottky-contact 2D transistors and diodes, by exper...

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Bibliographic Details
Main Authors: Long Chen, Liting Liu, Hongfu Li, Xingqiang Liu, Yuan Liu, Jean-Pierre Raskin, Denis Flandre, Guoli Li
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Nano Express
Subjects:
2D material
current transport
vertical device
simulation
Online Access:https://doi.org/10.1088/2632-959X/ad9853
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