Mechanisms of forward current transport in vertical nanoscale devices: insights and applications
Current transport at metal/semiconductor interface becomes critical to determining ultimate limit in performance of two-dimensional (2D) electronic devices. In this work, we study output characteristics as well as carrier transport of the vertical Schottky-contact 2D transistors and diodes, by exper...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Nano Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2632-959X/ad9853 |
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