Mechanisms of forward current transport in vertical nanoscale devices: insights and applications
Current transport at metal/semiconductor interface becomes critical to determining ultimate limit in performance of two-dimensional (2D) electronic devices. In this work, we study output characteristics as well as carrier transport of the vertical Schottky-contact 2D transistors and diodes, by exper...
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| Format: | Article |
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IOP Publishing
2025-01-01
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| Series: | Nano Express |
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| Online Access: | https://doi.org/10.1088/2632-959X/ad9853 |
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| author | Long Chen Liting Liu Hongfu Li Xingqiang Liu Yuan Liu Jean-Pierre Raskin Denis Flandre Guoli Li |
| author_facet | Long Chen Liting Liu Hongfu Li Xingqiang Liu Yuan Liu Jean-Pierre Raskin Denis Flandre Guoli Li |
| author_sort | Long Chen |
| collection | DOAJ |
| description | Current transport at metal/semiconductor interface becomes critical to determining ultimate limit in performance of two-dimensional (2D) electronic devices. In this work, we study output characteristics as well as carrier transport of the vertical Schottky-contact 2D transistors and diodes, by experimental measurements and detailed TCAD simulations. Device output current under the forward bias is primarily attributed to thermionic emission (TE) mechanism, then tunneling occurs and becomes the dominant interfacial charge transport in the few-layered MoS _2 transistors. While shrinking the vertical channel length from 20 nm to 3.6 and increasing the applied voltage, tunneling ratio rises above 90% for the sub-5 nm scale, indicating the dominated tunneling mechanism. Simultaneously, the Schottky diode loses its rectification ability. Noticeably, Fowler–Nordheim tunneling (FNT) mechanism cannot be accurately identified through the linear slope of ln( I / V ^2 ) versus 1/ V (FN-relation) of output current under high electric field, due to the co-existing thermionic current that displays a linear-like feature in the FN-relation plots. The transition from TE to FNT and direct tunneling (DT) regimes can be identified by analyzing the output current components and FN-relation of tunneling current. These results can be employed to understand physical insights and transport limitations of the nanoscale electronics, and to optimize the device design and performance for their ultra-scaled, low-power applications. |
| format | Article |
| id | doaj-art-3af32678c1994e2bbadb209c7aac68fe |
| institution | DOAJ |
| issn | 2632-959X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | Nano Express |
| spelling | doaj-art-3af32678c1994e2bbadb209c7aac68fe2025-08-20T02:40:33ZengIOP PublishingNano Express2632-959X2025-01-016101502210.1088/2632-959X/ad9853Mechanisms of forward current transport in vertical nanoscale devices: insights and applicationsLong Chen0Liting Liu1Hongfu Li2Xingqiang Liu3Yuan Liu4Jean-Pierre Raskin5Denis Flandre6Guoli Li7https://orcid.org/0000-0001-7440-5295Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University , Changsha 410082, People’s Republic of China; Research Institute of Hunan University in Chongqing , Chongqing 401135, People’s Republic of ChinaKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University , Changsha 410082, People’s Republic of ChinaKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University , Changsha 410082, People’s Republic of ChinaCollege of Semiconductors (College of Integrated Circuits), Hunan University , Changsha 410082, People’s Republic of ChinaKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University , Changsha 410082, People’s Republic of ChinaInstitute of Information and Communication Technologies, Electronics and Applied Mathematics, Université Catholique de Louvain , Louvain-la-Neuve 1348, BelgiumInstitute of Information and Communication Technologies, Electronics and Applied Mathematics, Université Catholique de Louvain , Louvain-la-Neuve 1348, BelgiumKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University , Changsha 410082, People’s Republic of China; College of Semiconductors (College of Integrated Circuits), Hunan University , Changsha 410082, People’s Republic of ChinaCurrent transport at metal/semiconductor interface becomes critical to determining ultimate limit in performance of two-dimensional (2D) electronic devices. In this work, we study output characteristics as well as carrier transport of the vertical Schottky-contact 2D transistors and diodes, by experimental measurements and detailed TCAD simulations. Device output current under the forward bias is primarily attributed to thermionic emission (TE) mechanism, then tunneling occurs and becomes the dominant interfacial charge transport in the few-layered MoS _2 transistors. While shrinking the vertical channel length from 20 nm to 3.6 and increasing the applied voltage, tunneling ratio rises above 90% for the sub-5 nm scale, indicating the dominated tunneling mechanism. Simultaneously, the Schottky diode loses its rectification ability. Noticeably, Fowler–Nordheim tunneling (FNT) mechanism cannot be accurately identified through the linear slope of ln( I / V ^2 ) versus 1/ V (FN-relation) of output current under high electric field, due to the co-existing thermionic current that displays a linear-like feature in the FN-relation plots. The transition from TE to FNT and direct tunneling (DT) regimes can be identified by analyzing the output current components and FN-relation of tunneling current. These results can be employed to understand physical insights and transport limitations of the nanoscale electronics, and to optimize the device design and performance for their ultra-scaled, low-power applications.https://doi.org/10.1088/2632-959X/ad98532D materialcurrent transportvertical devicesimulation |
| spellingShingle | Long Chen Liting Liu Hongfu Li Xingqiang Liu Yuan Liu Jean-Pierre Raskin Denis Flandre Guoli Li Mechanisms of forward current transport in vertical nanoscale devices: insights and applications Nano Express 2D material current transport vertical device simulation |
| title | Mechanisms of forward current transport in vertical nanoscale devices: insights and applications |
| title_full | Mechanisms of forward current transport in vertical nanoscale devices: insights and applications |
| title_fullStr | Mechanisms of forward current transport in vertical nanoscale devices: insights and applications |
| title_full_unstemmed | Mechanisms of forward current transport in vertical nanoscale devices: insights and applications |
| title_short | Mechanisms of forward current transport in vertical nanoscale devices: insights and applications |
| title_sort | mechanisms of forward current transport in vertical nanoscale devices insights and applications |
| topic | 2D material current transport vertical device simulation |
| url | https://doi.org/10.1088/2632-959X/ad9853 |
| work_keys_str_mv | AT longchen mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT litingliu mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT hongfuli mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT xingqiangliu mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT yuanliu mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT jeanpierreraskin mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT denisflandre mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications AT guolili mechanismsofforwardcurrenttransportinverticalnanoscaledevicesinsightsandapplications |