Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers
In this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes (SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. In order to achieve broadband and uniform emission spectra, the active regions contain a combination of chirped InAs QDs with differe...
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2016-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/7486046/ |
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| author | Ruizhe Yao Nicholas Weir Chi-Sen Lee Wei Guo |
| author_facet | Ruizhe Yao Nicholas Weir Chi-Sen Lee Wei Guo |
| author_sort | Ruizhe Yao |
| collection | DOAJ |
| description | In this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes (SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. In order to achieve broadband and uniform emission spectra, the active regions contain a combination of chirped InAs QDs with different In<sub>x</sub>Al<sub>1-x</sub>As strain-reducing layers (SRLs). It has been shown that the In<sub>x</sub>Al<sub>1-x</sub>As SRLs can effectively enlarge the QD emission energy separation between the ground and the excited states. In this paper, QDs with increased energy separation are utilized to enable a broadband QD ensemble by adding additional QD layers with the ground state emission wavelength tuned to fill the gap in emission. In addition, we employed a short postgrowth annealing process of 30 s to further even out the emission spectra. Characterizations of the emission spectra of the as-grown QDs and fabricated QD SLEDs are performed by room-temperature photoluminescence and electroluminescence under continuous-wave (c-w) operation, respectively. In the SLED devices, a broad and uniform spectrum with a linewidth of 100 nm at 3 dB is realized at an injection current level of 100 mA, and no significant spectrum dip is observed in the entire injection current window ranging from 50 <inline-formula> <tex-math notation="LaTeX">$\mu\text{A}$</tex-math></inline-formula> to 100 mA. |
| format | Article |
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| institution | OA Journals |
| issn | 1943-0655 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-3a341fc1e73c4508badd6c8b65d830b12025-08-20T02:38:11ZengIEEEIEEE Photonics Journal1943-06552016-01-01831710.1109/JPHOT.2016.25775957486046Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing LayersRuizhe Yao0Nicholas Weir1Chi-Sen Lee2Wei Guo3Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA, USADepartment of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA, USADepartment of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA, USADepartment of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA, USAIn this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes (SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. In order to achieve broadband and uniform emission spectra, the active regions contain a combination of chirped InAs QDs with different In<sub>x</sub>Al<sub>1-x</sub>As strain-reducing layers (SRLs). It has been shown that the In<sub>x</sub>Al<sub>1-x</sub>As SRLs can effectively enlarge the QD emission energy separation between the ground and the excited states. In this paper, QDs with increased energy separation are utilized to enable a broadband QD ensemble by adding additional QD layers with the ground state emission wavelength tuned to fill the gap in emission. In addition, we employed a short postgrowth annealing process of 30 s to further even out the emission spectra. Characterizations of the emission spectra of the as-grown QDs and fabricated QD SLEDs are performed by room-temperature photoluminescence and electroluminescence under continuous-wave (c-w) operation, respectively. In the SLED devices, a broad and uniform spectrum with a linewidth of 100 nm at 3 dB is realized at an injection current level of 100 mA, and no significant spectrum dip is observed in the entire injection current window ranging from 50 <inline-formula> <tex-math notation="LaTeX">$\mu\text{A}$</tex-math></inline-formula> to 100 mA.https://ieeexplore.ieee.org/document/7486046/BroadbandQuantum dotsSLEDs |
| spellingShingle | Ruizhe Yao Nicholas Weir Chi-Sen Lee Wei Guo Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers IEEE Photonics Journal Broadband Quantum dots SLEDs |
| title | Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers |
| title_full | Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers |
| title_fullStr | Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers |
| title_full_unstemmed | Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers |
| title_short | Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers |
| title_sort | broadband chirped inas quantum dot superluminescent light emitting diodes with in sub x sub al sub 1 x sub as strain reducing layers |
| topic | Broadband Quantum dots SLEDs |
| url | https://ieeexplore.ieee.org/document/7486046/ |
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