Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With In<sub>x</sub>Al<sub>1-x</sub>As Strain-Reducing Layers
In this paper, broadband InAs quantum-dot (QD) superluminescent light-emitting diodes (SLEDs) are grown by molecular beam epitaxy, fabricated, and then characterized. In order to achieve broadband and uniform emission spectra, the active regions contain a combination of chirped InAs QDs with differe...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7486046/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|