Analytical solution of the navier-stokes equations for heat and mass transfer processes during the growth of silicon carbide single crystals

A system of Navier-Stokes equations for the diffusion of gas mixture components is obtained and an approximate analytical solution describing the stationary stage of the silicon carbide single crystal growth process is found. Temperature distributions and concentrations of the mixture components in...

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Bibliographic Details
Main Authors: V. I. Altukhov, A. V. Sankin, V. S. Savvin, A. S. Sigov, D. V. Semenov
Format: Article
Language:Russian
Published: North-Caucasus Federal University 2024-12-01
Series:Современная наука и инновации
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Online Access:https://msi.elpub.ru/jour/article/view/1649
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