Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

Abstract This work develops unique physical models for AlGaN/GaN‐based Schottky barrier diodes (SBDs) grown on silicon (Si) substrates. The carrier transport and impact ionization processes are different from those of devices grown on sapphire substrates. Defects in the GaN epitaxial layer generate...

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Bibliographic Details
Main Authors: Jingting He, Zhizhong Wang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Shuting Cai, Yonghui Zhang, Xiaojuan Sun, Dabing Li, Xiaowei Sun, Zi‐Hui Zhang
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
AlGaN/GaN SBDs
breakdown voltage
metal/Al₂O₃/GaN‐based Schottky contact
Online Access:https://doi.org/10.1002/aelm.202500111
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https://doi.org/10.1002/aelm.202500111

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