EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably strong...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2015-03-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/59 |
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