EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably strong...

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Bibliographic Details
Main Authors: A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja
Format: Article
Language:English
Published: Belarusian National Technical University 2015-03-01
Series:Приборы и методы измерений
Subjects:
silicon p-n structures
current-voltage characteristics
dislocations
electroluminescence
Online Access:https://pimi.bntu.by/jour/article/view/59
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