EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably strong...

Full description

Saved in:
Bibliographic Details
Main Authors: A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja
Format: Article
Language:English
Published: Belarusian National Technical University 2015-03-01
Series:Приборы и методы измерений
Subjects:
silicon p-n structures
current-voltage characteristics
dislocations
electroluminescence
Online Access:https://pimi.bntu.by/jour/article/view/59
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably stronger than the intrinsic band-to-band emission in the wide temperature range of 4,2–300 K. The temperature dependent measurement of the D1 photoluminescence intensity shows that two energy levels placed below the conduction (0,04 eV) and above valence (0,32 eV) bands are responsible for this radiative recombination on dislocations.
ISSN:2220-9506
2414-0473

Similar Items