Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor
We investigated the impact of In within barriers on the gate leakage current in InAlGaN/GaN high-electron-mobility transistors (HEMTs). The results revealed that the gate leakage current in the (In)AlGaN barriers depends solely on the two-dimensional electron gas density, regardless of the presence...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adc5d8 |
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